Lateral distribution of hot-carrier-induced interface traps in MOSFETs

Excess Hot-Carrier Currents in SO1 MOSFETs and Its Implications

This work demonstrates that excess hot-carrier currents in SO1 MOSFETs are caused by self-heating. Self-heating-free Ism data should be used for dynamic lifetime extrapolation due to long thermal time constant. The underlying mechanism, increased impact ionization with temperature at low drain bias, is studied experimentally from the angle of thermal activation energy. Our study indicates that ...

Hot-carrier reliability of MOSFETs at room and cryogenic temperature

Interface traps density-of-states as a vital component for hot-carrier degradation modeling

We refine our approach for hot-carrier degradation modeling based on a thorough evaluation of the carrier energy distribution by means of a full-band Monte–Carlo simulator. The model is extended to describe the linear current degradation over a wide range of operation conditions. For this purpose we employ two types of interface states, either created by singleor by multiple-electron processes....

Effect of hot-carrier-induced interface states distribution on linear drain current degradation in 0.35 m n-type lateral diffused metal-oxide-semiconductor transistors

drain current degradation in 0.35 m n-type lateral diffused metal-oxide-semiconductor transistors J. R. Lee, Jone F. Chen, Kuo-Ming Wu, C. M. Liu, and S. L. Hsu Institute of Microelectronics, Department of Electrical Engineering and Advanced Optoelectronic Technology Center, National Cheng Kung University, No. 1 University Road, Tainan 70101, Taiwan Taiwan Semiconductor Manufacturing Company, L...

Ultrafast Lateral Photo-Dember Effect in Graphene Induced by Nonequilibrium Hot Carrier Dynamics.

The photo-Dember effect arises from the asymmetric diffusivity of photoexcited electrons and holes, which creates a transient spatial charge distribution and hence the buildup of a voltage. Conventionally, a strong photo-Dember effect is only observed in semiconductors with a large asymmetry between the electron and hole mobilities, such as in GaAs or InAs, and is considered negligible in graph...